Structural properties and electronic transport in intrinsic microcrystalline silicon deposited by the VHF-GD technique

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 996-1000

  Goerlitzer, M ^a   Torres, P ^a   Beck, N ^a   Wyrsch, N ^a   Keppner, H ^a   Pohl, J ^b   Shah, A ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

Microcrystalline; Silicon; Stability; Structure; Transport properties

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; GLOW DISCHARGES; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON;

HOLE MOBILITY; MICROCRYSTALLINE MATERIALS;

SEMICONDUCTING FILMS;

EID: 0032065120     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00257-9     Document Type: Article

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