High deposition rates for microcrystalline silicon with low temperature plasma enhanced chemical vapor deposition processes

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 861-865

  Hapke, P ^a   Finger, F ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Conductivity; Deposition rate; Microcrystalline silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC DISCHARGES; HYDROGEN; MIXTURES; SILANES;

MICROCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTING SILICON;

EID: 0032066497     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00343-3     Document Type: Article

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