Fabrication of hydrogenated microcrystalline silicon thin films at low temperature by VHF-PECVD

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 23, Issue 9, 2002, Pages 902-908

  Yang, Huidong ^a,b   Wu, Chunya ^a   Mai, Yaohua ^a   Li, Hongbo ^a   Xue, Junming ^a   Li, Yan ^a   Ren, Huizhi ^a   Zhang, Lizhu ^c   Geng, Xinhua ^a   Xiong, Shaozhen ^a  

^a NANKAI UNIVERSITY   (China)

^b Wuyi University   (China)

^c Sch of Mech and Elec Indust   (China)

Author keywords

c Si; Crystallinity; Deposition rate; H thin films; VHF PECVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; FABRICATION; HYDROGENATION; SEMICONDUCTING SILICON;

CRYSTALLINITY; H THIN FILMS; MICROCRYSTALLINE SILICON;

SEMICONDUCTING FILMS;

EID: 0036760948     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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