Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1043-1046

  Andre, C L ^a   Khan, A ^a   Gonzalez, M ^a   Hudait, M K ^a   Fitzgerald, E A ^b   Carlin, J A ^c   Currie, M T ^c   Leitz, C W ^c   Langdo, T A ^c   Clark, E B ^d   Wilt, D M ^d   Ringel, S A ^a  

^a Ohio State University   (United States)

^b USA   (United States)

^c AmberWave Systems Corporation   (United States)

^d NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH MINORITY CARRIER HOLE LIFETIMES; MINORITY CARRIER DIFFUSION LENGTHS; OPEN CIRCUIT VOLTAGES; SINGLE JUNCTION GALLIUM ARSENIDE SOLAR CELLS; THREADING DISLOCATION DENSITIES;

SOLAR CELLS;

EID: 0036957047     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

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