Simulation of silicon etching through a fluorocarbon layer

Vacuum

Volumn 79, Issue 3-4, 2005, Pages 119-123

  Knizikevicius R ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

Fluorocarbon layer; Reactive ion etching; Silicon

Indexed keywords

ADSORPTION; COMPUTER SIMULATION; FLUOROCARBONS; INTERFACIAL ENERGY; MIXING; PLASMAS; RELAXATION PROCESSES; SILICON; SPUTTERING;

ETCHING RATE; FLUOROCARBON LAYERS; PLASMA DISSOCIATION; SILICON ETCHING;

REACTIVE ION ETCHING;

EID: 22544450237     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.02.003     Document Type: Article

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