Real dimensional simulation of anisotropic etching of silicon in CF4+O2 plasma

Vacuum

Volumn 66, Issue 1, 2002, Pages 39-47

  Knizikevicius R ^a   Galdikas, A ^a,b   Grigonis, A ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

^b LITHUANIAN ENERGY INSTITUTE   (Lithuania)

Author keywords

CF4+O2 Plasma; Reactive ion etching; Silicon

Indexed keywords

ANISOTROPY; COMPOSITION; FLUOROCARBONS; FLUXES; ION BOMBARDMENT; MASKS; OXYGEN; PLASMA ETCHING; REACTIVE ION ETCHING;

ANISOTROPIC ETCHING; FLUOROCARBON PLASMA; PLASMOCHEMICAL ETCHING (PCE);

SILICON;

EID: 0036606687     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00418-3     Document Type: Article

References (13)