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Volumn 65, Issue 1, 2002, Pages 101-108
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Real dimensional simulation of SiO2 etching in CF4 + H2 plasma
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Author keywords
CF4 + H2 plasma; Reactive ion etching; SiO2
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Indexed keywords
ASPECT RATIO;
COMPUTER SIMULATION;
FLUOROCARBONS;
FREE RADICALS;
ION BOMBARDMENT;
PLASMA THEORY;
REACTIVE ION ETCHING;
FLUOROCARBON PLASMAS;
SILICA;
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EID: 0037176771
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0042-207X(01)00413-4 Document Type: Article |
Times cited : (7)
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References (14)
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