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Volumn 65, Issue 1, 2002, Pages 101-108

Real dimensional simulation of SiO2 etching in CF4 + H2 plasma

Author keywords

CF4 + H2 plasma; Reactive ion etching; SiO2

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; FLUOROCARBONS; FREE RADICALS; ION BOMBARDMENT; PLASMA THEORY; REACTIVE ION ETCHING;

EID: 0037176771     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00413-4     Document Type: Article
Times cited : (7)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.