High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance

IEEE Journal of Quantum Electronics

Volumn 41, Issue 7, 2005, Pages 980-985

  Cellek, O O ^a   Ozer, Selcuk ^a   Besikci, C ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Focal plane array (FPA); Infrared detector

Indexed keywords

ARRAYS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; IMPACT IONIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

FOCAL PLANE ARRAY (FPA); QUANTUM WELL INFRARED PHOTODETECTORS;

INFRARED DETECTORS;

EID: 22444440609     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.848947     Document Type: Article

References (19)

1. D. Sengupta, V. Jandhyala, S. Kim, W. Fang, J. Malin, P. Apostolakis, K. C. Hsieh, Y. C. Chang, S. L. Chuang, S. Bandara, S. Gunapala, M. Feng, E. Michielssen, and G. Stillman, "Redshifting and broadening of quantum-well infrared photodetector's response via impurity-free vacancy disordering," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 4, pp. 746-757, Jul./Aug. 1998.
2. Y. Gusakov, E. Finkman, G. Bahir, and D. Ritter, "The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength," Appl. Phys. Lett., vol. 79, pp. 2508-2510, 2001.
3. S. D. Gunapala, B. F. Levine, D. Ritter, R. Hamm, and M. B. Panish, "Lattice-matched InGaAsP/InP long-wavelength quantum well infrared photodetectors," Appl. Phys. Lett., vol. 60, pp. 636-638, 1992.
4. S. D. Gunapala, B. F. Levine, D. Ritter, R. Hamm, and M. B. Panish, "InGaAs/InP long wavelength quantum well infrared photodetectors," Appl. Phys. Lett., vol. 58, pp. 2024-2026, 1991.
5. J. Y. Andersson, L. Lundqvist, Z. F. Paska, K. Streubel, and J. Wallin, "Long-wavelength quantum-well infrared detectors based on intersub-band transitions in InGaAs/InP quantum wells," in Proc. SPIE, vol. 1762, 1992, pp. 216-226.
6. D. K. Sengupta, S. L. Jackson, A. P. Curtis, W. Fang, J. I. Malin, T. U. Horton, Q. Hartman, H. C. Kuo, S. Thomas, J. Miller, K. C. Hsieh, I. Adesida, S. L. Chuang, M. Feng, G. E. Stillman, Y. C. Chang, W. Wu, J. Tucker, H. Chen, J. M. Gibson, J. Mazumder, L. Li, and H. C. Liu, "Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm," J. Electron. Mater., vol. 26, pp. 1376-1381, 1997.
7. C. Jelen, S. Slivken, T. David, M. Razeghi, and G. J. Brown, "Noise performance of InGaAs-InP quantum-well infrared photodetectors," IEEE J. Quantum Electron., vol. 34, no. 7, pp. 1124-1128, Jul. 1998.
8. H. C. Liu, C. Song, E. Dupont, P. Poole, P. H. Wilson, B. J. Robinson, and D. A. Thompson, "Near and middle infrared dual band operation of InGaAs/InP quantum well infrared photodetector," Electron. Lett., vol. 35, pp. 2055-2056, 1999.
9. J. Jiang, C. Jelen, M. Razeghi, and G. J. Brown, "High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates," IEEE Photon. Technol. Lett., vol. 14, no. 3, pp. 372-374, Mar. 2002.
10. B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, "High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors," Semicond. Sci. Technol., vol. 19, pp. 442-445, 2004.
11. J. Jiang, K. Mi, R. McClintock, M. Razeghi, G. J. Brown, and C. Jelen, "Demonstration of 256 × 256 focal plane array based on Al-Free GaInAs-InP QWIP," IEEE Photon. Technol. Lett., vol. 15, no. 9, pp. 1273-1275, Sep. 2003.
12. S. Ozer, O. O. Cellek, and C. Besikci, "Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array," Infrared Phys. Technol., to be published.
13. A. De Rossi, E. Costard, N. Guerineau, and S. Rommeluere, "Effect of finite pixel size on optical coupling in QWIPs," Infrared Phys. Technol., vol. 44, pp. 325-330, 2003.
14. R. Rehm, H. Schneider, K. Schwarz, M. Walther, P. Koidl, and G. Weimann, "Responsivity and gain of InGaAs/GaAs-QWIPs and GaAs/AIGaAs QWIPs: A comparative study," Proc. SPIE, vol. 4288, pp. 379-385, 2001.
15. H. Schneider, "Theory of avalanche multiplication and excess noise in quantum-well infrared photodetectors," Appl. Phys. Lett., vol. 82, pp. 4376-4378, 2003.
16. R. Rehm, H. Schneider, M. Walther, P. Koidl, and G. Weimann, "Avalanche multiplication due to impact ionization in quantum-well infrared photodetectors: A quantitative approach," Appl. Phys. Lett., vol. 82, pp. 2907-2909, 2003.
17. O. O. Cellek, S. Memis, U. Bostanci, S. Ozer, and C. Besikci, "Gain and transient photoresponse of quantum well infrared photodetectors: A detailed ensemble Monte Carlo study," Physica E, vol. 24, pp. 318-327, 2004.
18. 0.7As/GaAs quantum-well infrared photodetectors," Semicond. Sci. Technol., vol. 19, pp. 183-190, 2004.
19. E. Costard, P. Bois, A. D. Rossi, A. Nedelcu, O. Cocle, F. H. Gauthier, and F. Audier, "QWIP detectors and thermal imagers," C. R. Physique, vol. 4, pp. 1089-1102, 2003.