The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength

Applied Physics Letters

Volumn 79, Issue 16, 2001, Pages 2508-2510

  Gusakov, Y ^a   Finkman, E ^a   Bahir, G ^a   Ritter, D ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886313     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1408908     Document Type: Article

References (13)

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