High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 442-445

  Aslan, B ^a,c   Liu, H C ^a   Bezinger, A ^a   Poole, P J ^a   Buchanan, M ^a   Rehm, R ^b   Schneider, H ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL BAND RESPONSE; INTRABAND AVALANCHE MULTIPLICATION; QUANTUM WELL PHOTODETECTORS; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE;

ACOUSTIC NOISE MEASUREMENT; AVALANCHE DIODES; BAND STRUCTURE; IMPACT IONIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

PHOTODETECTORS;

EID: 1642298164     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/026     Document Type: Article

References (10)

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