Responsivity and gain of InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPS: A comparative study

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4288, Issue , 2001, Pages 379-385

  Rehm, R ^a   Schneider, H ^a   Schwarz, K ^a   Walther, M ^a   Koidl, P ^a   Weimann, G ^a  

^a FRAUNHOFER GESELLSCHAFT   (Germany)

Author keywords

Gain; InGaAs; IR detector; Quantum well; QWIP; Responsivity

Indexed keywords

ELECTRIC POTENTIAL; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE; BIAS VOLTAGE; DOPING DENSITY; PEAK RESPONSIVITY; QUANTUM WELL INTERSUBBAND PHOTODETECTOR;

INFRARED DETECTORS;

EID: 0034870310     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.429424     Document Type: Article

References (11)