Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm

Journal of Electronic Materials

Volumn 26, Issue 12, 1997, Pages 1376-1381

  Sengupta, D K ^a   Jackson, S L ^a   Curtis, A P ^a   Fang, W ^a   Malin, J I ^a   Horton, T U ^a   Hartman, Q ^a   Kuo, H C ^a   Thomas, S ^a   Miller, J ^a   Hsieh, K C ^a   Adesida, I ^a   Chuang, S L ^a   Feng, M ^a   Stillman, G E ^a   Chang, Y C ^b   Wu, W ^a   Tucker, J ^a   Chen, H ^a   Gibson, J M ^a   Mazumder, J ^a   Li, L ^c   Liu, H C ^c   more..

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Gas source molecular beam epitaxy (GSMBE); InP inGaAs; Quantum well infrared photodectors (QWIPs)

Indexed keywords

CHARACTERIZATION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DOUBLE CRYSTAL X RAY DIFFRACTION; GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM GALLIUM ARSENIDE; INDIUM PHOSPHIDE; QUANTUM WELL INFRARED PHOTODETECTORS;

INFRARED DETECTORS;

EID: 5244244085     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0054-3     Document Type: Article

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