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IEEE Photonics Technology Letters

Volumn 14, Issue 3, 2002, Pages 372-374

High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates

(4) Jiang, J b Jelen, C a Razeghi, M a Brown, G J b

a IEEE

b NONE

Author keywords

Annealing; Epitaxial growth; Indium compounds; Photodetectors; Quantum well devices; Silicon

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; NUCLEATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DARK CURRENT; QUANTUM WELL INFRARED PHOTODETECTORS (QWIP);

INFRARED DETECTORS;

EID: 0036504102 PISSN: 10411135 EISSN: None Source Type: Journal
DOI: 10.1109/68.986817 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.