Noise performance of InGaAs - InP quantum-well infrared photodetectors

IEEE Journal of Quantum Electronics

Volumn 34, Issue 7, 1998, Pages 1124-1128

  Jelen, Christopher ^a   Slivken, Steven ^a   David, Thibaut ^a   Razeghi, Manijeh ^a   Brown, G J ^b  

^a Northwestern University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Infrared detectors; Noise; Noise measurement; Photodetectors; Quantum well devices

Indexed keywords

INFRARED DETECTORS; OHMIC CONTACTS; PHOTOLITHOGRAPHY; SEMICONDUCTOR QUANTUM WELLS; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO;

BIAS DEPENDANT GAIN; ELECTRON DIFFUSION LENGTH; ELECTRON TRAPPING PROBABILITY; QUANTUM WELL INFRARED PHOTODETECTORS; THERMAL GENERATION RATE;

PHOTODETECTORS;

EID: 0032123797     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.687853     Document Type: Article

References (11)

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