A triangle-shaped nanoscale metal-oxide-semiconductor device

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 4042-4045

  Gondermann, J ^a   Rower Th ^a   Hadam, B ^a   Koster Th ^a   Stein, J ^a   Spangenberg, B ^a   Roskos, H ^a   Kurz, H ^a  

^a UNIVERSITY HOSPITAL RWTH AACHEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON BEAM LITHOGRAPHY; ETCHING; FABRICATION; GATES (TRANSISTOR); POTASSIUM COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; WIRE;

BONDED AND ETCHED BACK SILICON ON INSULATOR MATERIAL; POLYSILICON GATE; POTASSIUM HYDROXIDE; WET ETCHING;

MOS DEVICES;

EID: 0030288635     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588640     Document Type: Article

References (17)

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