Properties of indium molybdenum oxide films fabricated via high-density plasma evaporation at room temperature

Journal of Materials Research

Volumn 20, Issue 1, 2005, Pages 247-255

  Sun, Shi Yao ^a   Huang, Jow Lay ^a   Lii, Ding Fwu ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; OPACITY; OPTICAL PROPERTIES; OXYGEN; PLASMA SOURCES; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

HIGH DENSITY PLASMA EVAPORATION; INDIUM MOLYBDENUM OXIDE (IMO) FILMS;

INDIUM COMPOUNDS;

EID: 22144462904     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0031     Document Type: Article

References (38)

1. C.G. Granqvist and A. Hultåker: Transparent and conducting ITO films: New developments and applications. Thin Solid Films 411, 1 (2002).
2. B.G. Lewis and D.C. Paine: Applications and processing of transparent conducting oxides. MRS Bull. 25(8), 22 (2000).
3. D.S. Ginley and C. Bright: Transparent conducting oxides. MRS Bull. 25(8), 15 (2000).
4. Y. Shigesato, S. Takaki, and T. Haranoh: Electrical and structural properties of low resistivity tin-doped indium oxide films. J. Appl. Phys. 71, 3356 (1992).
5. T. Oyama, N. Hashimoto, J. Shimizu, Y. Each, H. Kojima, K. Alkawa, and K. Suzuki: Low resistance indium tin oxide films on large scale glass substrate. J. Vac. Sci. Technol. A 10, 1682 (1992).
6. P.K. Song, Y. Shigesato, M. Kamei, and I. Yasui: Electrical and structural properties of Tin-doped indium oxide films deposited by dc sputtering at room temperature. Jpn. J. Appl. Phys. Part 1 38, 2921 (1999).
7. P.F. Carcia, R.S. Mclean, M.H. Reilly, Z.G. Li, L.J. Pillione, and R.F. Messier: Influence of energetic bombardment on stress, resistivity, and microstructure of indium tin oxide films grown by radio frequency magnetron sputtering on flexible polyester substrates. J. Vac. Sci. Technol. A 21, 745 (2003).
8. V. Craciun, D. Craciun, Z. Chen, J. Hwang, and R.K. Singh: Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition. Appl. Surf. Sci. 168, 118 (2000).
9. 3 thin films prepared by d.c. magnetron sputtering. Thin Solid Films 290, 1 (1996).
10. Y. Meng, X.L. Yang, H.X. Chen, J. Shen, Y.M. Jiang, Z.J. Zhang, and Z.Y. Hua: Molybdenum-doped indium oxide transparent conductive thin films. J. Vac. Sci. Technol. A 20, 288 (2002).
11. O3: Mo. Thin Solid Films 394, 219 (2001).
12. Y. Yoshida, T.A. Gessert, C.L. Perkins, and T.J. Coutts: Development of radio-frequency magnetron sputtered indium molybdenum oxide. J. Vac. Sci. Technol. A 21, 1092 (2003).
13. Y. Yoshida, D.M. Wood, T.A. Gessert, and T.J. Coutts: High-mobility, sputtered films of indium oxide doped with molybdenum. Appl. Phys. Lett. 84, 2097 (2004).
14. 3 thin films by pulsed laser deposition. J. Appl. Phys. 95, 3831 (2004).
15. Y. Shigesato, I. Yasui, Y. Hayashi, S. Takaki, T. Oyama, and M. Kamei: Effects of water partial pressure on the activated electron beam evaporation process to deposit tin-doped indium-oxide films. J. Vac. Sci. Technol. A 13, 268 (1995).
16. S.Y. Sun, J.L. Huang, and D.F. Lii: Effects of oxygen contents on the electrical and optical properties of indium molybdenum oxide films fabricated by high density plasma evaporation. J. Vac. Sci. Technol. A 22, 1235 (2004).
17. K. Suzuki, N. Hashimoto, T. Oyama, J. Shimizu, Y. Each, and H. Kojima: Large scale and low resistance ITO films formed at high deposition rates. Thin Solid Films 226, 104 (1993).
18. B. Chapman: Glow Discharge Processes - Sputtering and Plasma Etching (John Wiley & Sons, Inc., New York, NY, 1980), Chap. 5.
19. G. Frank and H. Köstlin: Electrical properties and defect model of tin-doped indium oxide layers. Appl. Phys. A 27, 197 (1982).
20. D.H. Zhang and H.L. Ma: Scattering mechanisms of charge carriers in transparent conducting oxide films. Appl. Phys. A 62, 487 (1996).
21. A.J. Freeman, K.R. Poeppelmeier, T.O. Mason, R.P.H. Chang, and T.J. Marks: Chemical and thin film strategies for new transparent conducting oxides. MRS Bull. 25(8), 45 (2000).
22. Y. Shigesato, Y. Hayashi, and T. Haranoh: Doping mechanisms of tin-doped indium oxide films. Appl. Phys. Lett. 61, 73 (1992).
23. G.B. Gonzalez, J.B. Cohen, J-H. Hwang, T.O. Mason, J.P. Hodges, and J.D. Jorgensen: Neutron diffraction study on the defect structure of indium-tin-oxide. J. Appl. Phys. 89, 2550 (2001).
24. B.D. Cullity: Elements of X-ray Diffraction, 2nd ed. (Addison-Wesley Publishing Company, Inc., 1978), pp. 363-367.
25. J.M. Ting and B.S. Tsai: DC reactive sputtering deposition of ZnO: Al thin film on glass. Mater. Chem. Phys. 72, 273 (2001).
26. H.P. Klug and L.E. Alexander: X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, 2nd ed. (Wiley, New York, 1974), Chap. 9.
27. T. Ishida, H. Kobayashi, and Y. Nakato: Structures and properties of electron-beam-evaporated indium tin oxide films as studied by x-ray photoelectron spectroscopy and work-function measurements. J. Appl. Phys. 73, 4344 (1993).
28. H. Kobayashi, T. Ishida, K. Nakamura, Y. Nakato, and H. Tsubomura: Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/ silicon oxide/silicon junction solar cells. J. Appl. Phys. 72, 5288 (1992).
29. J.C.C. Fan and J.B. Goodenough: X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films. J. Appl. Phys. 48, 3524 (1977).
30. J-L. Huang, J-Y. Jah, B-S. Yau, C-Y. Chen, and H-H. Lu: Reactive magnetron sputtering of indium tin oxide films on acrylicsmorphology and bonding state. Thin Solid Films 370, 33 (2000).
31. 3 films. J. Appl. Phys. 73, 1327 (1993).
32. Z. Wang and X. Hu: Structural and electrochemical characterization of 'open-structured' ITO films. Thin Solid Films 392, 22 (2001).
33. A.L. Dawar and J.C. Joshi: Semiconducting transparent thin films: Their properties and applications. J. Mater. Sci. 19, 1 (1984).
34. W-F. Wu and B-S. Chiou: Properties of radio-frequency magnetron sputtered ITO films without in-situ substrate heating and post-deposition annealing. Thin Solid Films 247, 201 (1994).
35. T. Matsuoka, J. Kuwata, Y. Fujita, and A. Abe: An XPS study of blackening of indium-tin oxide film during deposition of dielectric films by rf magnetron sputtering. Jpn. J. Appl. Phys. 27, L1199 (1988).
36. 3-ZnO films. J. Appl. Phys. 92, 5761 (2002).
37. T.S. Moss: Optical Properties of Semiconductors (Butterworths, London, U.K., 1961).
38. 2) films. Phys. Rev. B 44, 5672 (1991).