High-conductivity n-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition

Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4289-4291

  Pophristic, M ^a   Quo, S P ^a   Peres, B ^a  

^a EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ORGANOMETALLICS; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SUPERLATTICES;

HALL MEASUREMENT;

ALUMINUM COMPOUNDS;

EID: 0038787800     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1582377     Document Type: Article

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