InGaN laser diodes by molecular beam epitaxy

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5738, Issue , 2005, Pages 245-252

  Kauer, M ^a   Heffernan, J ^a   Hooper, S E ^a   Bousquet, V ^a   Johnson, K ^a   Zellweger, C ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

Blue laser diode; GaN; InGaN; Molecular beam epitaxy; Nitride semiconductor laser

Indexed keywords

CURRENT DENSITY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

BLUE LASER DIODES; GAN; INGAN; NITRIDE SEMICONDUCTOR LASERS;

SEMICONDUCTOR LASERS;

EID: 21844479567     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.597027     Document Type: Conference Paper

References (16)

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