Thermal analysis for GaN laser diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 A, 1999, Pages 2764-2768

  Hatakoshi, Gen Ichi ^a   Onomura, Masaaki ^a   Yamamoto, Masahiro ^a   Nunoue, Shin Ya ^a   Itaya, Kazuhiko ^a   Ishikawa, Masayuki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Device simulation; GaN; Numerical analysis; Operation temperature; Semiconductor laser; Thermal resistance

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; HEAT CONDUCTION; HEAT RESISTANCE; NUMERICAL ANALYSIS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THERMOANALYSIS;

GALLIUM NITRIDE;

SEMICONDUCTOR LASERS;

EID: 0032674773     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2764     Document Type: Article

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