Characteristics of LaAlO3 as insulating buffer layers of ferroelectric-gate field effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6899-6903

  Kang, Seung Kuk ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Al2O3; ECR sputtering; LaAlO3; MFMIS diode; SrBi 2Ta2O9

Indexed keywords

FERROELECTRIC MATERIALS; INSULATING MATERIALS; SEMICONDUCTOR DEVICES; THIN FILMS;

AL2O3; ECR-SPUTTERING; LAALO3; MFMIS DIODE; SRBI 2TA2O9;

TRANSISTORS;

EID: 0344864395     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6899     Document Type: Article

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