Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

Thin Solid Films

Volumn 445, Issue 2, 2003, Pages 322-326

  Nomura, Kenji ^a,b   Ohta, Hiromichi ^b   Ueda, Kazushige ^a   Kamiya, Toshio ^a,b   Hirano, Masahiro ^b   Hosono, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electrical properties and measurements; Field effect; InGaO3(ZnO)5; Metal oxide semiconductor structure; Single crystalline film

Indexed keywords

ALUMINA; AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; HIGH RESOLUTION ELECTRON MICROSCOPY; INDIUM COMPOUNDS; MISFET DEVICES; SINGLE CRYSTALS; STOICHIOMETRY; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL PROPERTIES AND MEASUREMENTS; FIELD EFFECT; INGAO3(ZNO)5; METAL-OXIDE SEMICONDUCTOR STRUCTURE; SINGLE CRYSTALLINE FILM;

THIN FILMS;

EID: 1642337004     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.08.033     Document Type: Conference Paper

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