메뉴 건너뛰기




Volumn 3, Issue , 2004, Pages 1880-1883

A model for the accurate determination of the electromechanical coupling factor of thin film SAW devices on non-insulating substrates

Author keywords

Electrical model; Electromagnetic feedthrough; Non insulating substrate; Piezoelectric thin film; SAW

Indexed keywords

ELECTRICAL MODELS; ELECTROMAGNETIC FEEDTHROUGH; NON-INSULATING SUBSTRATES; PIEZOELECTRIC THIN FILMS;

EID: 21644478266     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2004.1418197     Document Type: Conference Paper
Times cited : (14)

References (18)
  • 2
    • 0036566583 scopus 로고    scopus 로고
    • Piezoelectrically actuated flextensional micromachined ultrasound transducers
    • G. Perçin, and B. T. Khuri-Yakub, "Piezoelectrically actuated flextensional micromachined ultrasound transducers", Ultrasonics, vol. 40, 2002, pp. 441-448.
    • (2002) Ultrasonics , vol.40 , pp. 441-448
    • Perçin, G.1    Khuri-Yakub, B.T.2
  • 3
  • 4
    • 84961839739 scopus 로고    scopus 로고
    • Structural properties and frequency response of AlN thin film surface acoustic wave device
    • C.-W. Nam, and K.-C. Lee, "Structural properties and frequency response of AlN thin film surface acoustic wave device", Russian-Korean Intl. Symp. Sci. Technol. Proc. 1, 2001, pp. 206-209.
    • (2001) Russian-Korean Intl. Symp. Sci. Technol. Proc. , vol.1 , pp. 206-209
    • Nam, C.-W.1    Lee, K.-C.2
  • 5
    • 0036809679 scopus 로고    scopus 로고
    • Deposition of aluminium nitride film by magnetron sputtering for diamond-based surface acoustic wave applications
    • V. Mortet et al., "Deposition of aluminium nitride film by magnetron sputtering for diamond-based surface acoustic wave applications", Phys. Stat. Sol (a). vol. 193, 2002, pp. 482-488.
    • (2002) Phys. Stat. Sol (a). , vol.193 , pp. 482-488
    • Mortet, V.1
  • 6
    • 0037198543 scopus 로고    scopus 로고
    • Nanotechnology for SAW devices on AlN epilayers
    • T. Palacios et al., "Nanotechnology for SAW devices on AlN epilayers", Mat. Sci. Eng., vol. B39, 2002, pp.154-158.
    • (2002) Mat. Sci. Eng. , vol.B39 , pp. 154-158
    • Palacios, T.1
  • 7
    • 0036992215 scopus 로고    scopus 로고
    • High velocity SAW using aluminum nitride film on unpolished nucleation side of freestanding CVD diamond
    • O. Elmazria et al., "High velocity SAW using aluminum nitride film on unpolished nucleation side of freestanding CVD diamond", IEEE Ultrason. Symp. Proc. 1, 2002, pp. 139-142.
    • (2002) IEEE Ultrason. Symp. Proc. , vol.1 , pp. 139-142
    • Elmazria, O.1
  • 8
    • 0030696545 scopus 로고    scopus 로고
    • Experimental surface acoustic wave properties of AlN thin films on sapphire substrates
    • K. Kaya, H. Takahashi, V. Shibata, Y. Kanno, and T. Hirai, "Experimental surface acoustic wave properties of AlN thin films on sapphire substrates", Jpn. J. Appl. Phys., vol. 36, 1997, pp. 307-312.
    • (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 307-312
    • Kaya, K.1    Takahashi, H.2    Shibata, V.3    Kanno, Y.4    Hirai, T.5
  • 10
    • 0034989887 scopus 로고    scopus 로고
    • Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices
    • F. Semond et al., "Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices", Ann. Chim. Sci. Mat, vol. 26, 2001, pp. 177-182.
    • (2001) Ann. Chim. Sci. Mat , vol.26 , pp. 177-182
    • Semond, F.1
  • 11
    • 0033229231 scopus 로고    scopus 로고
    • Molecular-beam epitaxy of a strongly latticemismatched heterosystem AlN/Si (111) for application in SAW devices
    • D. G. Kipshidze et al., "Molecular-beam epitaxy of a strongly latticemismatched heterosystem AlN/Si (111) for application in SAW devices", Semiconductors, vol. 33, 1999, pp. 1241-1246.
    • (1999) Semiconductors , vol.33 , pp. 1241-1246
    • Kipshidze, D.G.1
  • 12
    • 0041510459 scopus 로고    scopus 로고
    • Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films
    • M. Clement et al., "Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films", J. Appl. Phys., vol. 94, 2003, pp. 1495-1500.
    • (2003) J. Appl. Phys. , vol.94 , pp. 1495-1500
    • Clement, M.1
  • 13
    • 0036989395 scopus 로고    scopus 로고
    • Role of argon ion bombardment in sputtered AlN films for SAW devices
    • E. Iborra et al., "Role of argon ion bombardment in sputtered AlN films for SAW devices", IEEE Ultrason. Symp. Proc. 1, 2002, pp. 411-414.
    • (2002) IEEE Ultrason. Symp. Proc. , vol.1 , pp. 411-414
    • Iborra, E.1
  • 14
    • 2442553906 scopus 로고    scopus 로고
    • Influence of oxygen and argon on the crystal quality and piezoelectric response of AlN sputtered thin films
    • L. Vergara et al., "Influence of oxygen and argon on the crystal quality and piezoelectric response of AlN sputtered thin films", Diamond Relat. Mater., vol. 13, 2004, pp. 839-842.
    • (2004) Diamond Relat. Mater. , vol.13 , pp. 839-842
    • Vergara, L.1
  • 15
    • 2342484497 scopus 로고    scopus 로고
    • Effect of particle bombardment on the orientation and the r-esidual stress of sputtered AlN films for SAW devices
    • E. Iborra et al., "Effect of particle bombardment on the orientation and the r-esidual stress of sputtered AlN films for SAW devices", IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 51, 2004, pp. 352-358.
    • (2004) IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control , vol.51 , pp. 352-358
    • Iborra, E.1
  • 17
    • 0037186153 scopus 로고    scopus 로고
    • Approximate expresions for the capacitance and electrostatic potential of interdigitated electrodes
    • M. W. den Otter, "Approximate expresions for the capacitance and electrostatic potential of interdigitated electrodes", Sensors and Actuators, vol. A96, 2002, pp. 140-144.
    • (2002) Sensors and Actuators , vol.A96 , pp. 140-144
    • Den Otter, M.W.1
  • 18
    • 0242656490 scopus 로고    scopus 로고
    • De-embedding and embedding S-parameter networks using a vector network analyzer
    • Agilent Technologies, "De-embedding and embedding S-parameter networks using a vector network analyzer", Application note 1364-1.
    • Application Note , vol.1364 , Issue.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.