Reversible leakage current switching in thin gate oxides - Soft breakdown or noise?

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2004, Pages 37-40

  Reiner, Joachim C ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

Breakdown precursors; Bursts; Noise; Oxide traps; Pre breakdown leakage current fluctuations; Reliability; RTS; Thin gate oxide

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; ELECTRON TUNNELING; GATES (TRANSISTOR); MATHEMATICAL MODELS; MOS CAPACITORS; MOSFET DEVICES; OXIDES; RELIABILITY; SPURIOUS SIGNAL NOISE; STRESS ANALYSIS; SWITCHING; THICKNESS MEASUREMENT;

BREAKDOWN PRECURSORS; BURSTS; NOISE; OXIDE TRAPS; PRE-BREAKDOWN LEAKAGE CURRENT FLUCTUATIONS; RTS; THIN GATE OXIDES;

LEAKAGE CURRENTS;

EID: 21644448124     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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