A systematic leakage current analysis of gate oxide soft breakdown

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 196-198

  Reiner, Joachim C ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

Breakdown precursors; Noise; Pre breakdown triggering; Reliability; Soft breakdown; Thin gate oxide

Indexed keywords

GATES (TRANSISTOR); RELIABILITY;

BREAKDOWN MECHANISM; BREAKDOWN PRECURSORS; GATE OXIDE; GATE OXIDE LAYERS; LEAKAGE CURRENT ANALYSIS; NOISE; PRE-BREAKDOWN TRIGGERING; PREBREAKDOWN; SOFT BREAKDOWN; THIN GATE OXIDES;

LEAKAGE CURRENTS;

EID: 84949218779     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194267     Document Type: Conference Paper

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