Physical origin of SILC and noisy breakdown in very thin silicon nitride gate dielectric

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 20-21

  Polishchuk, I ^a   King, T J ^a   Hu, C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; ELECTRON TRAPS; ELECTRON TUNNELING; FERMI LEVEL; GATES (TRANSISTOR); GROUND STATE; LEAKAGE CURRENTS; MOSFET DEVICES; PERMITTIVITY; SILICON NITRIDE;

GATE DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 0034873613     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)