Similarity of pre-breakdown leakage current fluctuations of p- and n-MOSFETs

IEEE International Integrated Reliability Workshop Final Report

Volumn 2003-January, Issue , 2003, Pages 109-111

  Reiner, J C ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

Degradation; Electric breakdown; Electron traps; Fluctuations; Frequency; Leakage current; MOSFET circuits; Physics; Stress; Switches

Indexed keywords

MOSFET DEVICES; TIMING CIRCUITS;

CHARGED TRAPS; FLUCTUATION; FREQUENCY; GATE OXIDE THICKNESS; INVERSION MODES; MOSFET CIRCUITS; MOSFETS; OXIDE LAYER; POSITIVELY CHARGED; PRE-BREAKDOWN LEAKAGE CURRENT FLUCTUATIONS;

LEAKAGE CURRENTS;

EID: 84947293640     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2003.1283312     Document Type: Conference Paper

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