Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

Materials Chemistry and Physics

Volumn 78, Issue 3, 2003, Pages 772-777

  Chou, Dei Wei ^a   Wang, Hwei Heng ^a   Wang, Yeong Her ^a   Houng, Mau Phon ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Breakdown field; Dielectric constant; Liquid phase; Oxide films; Refractive indices

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PERMITTIVITY; REFRACTIVE INDEX; THIN FILMS; VOLTAGE MEASUREMENT;

METAL-OXIDE-SEMICONDUCTOR (MOS) STRUCTURES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037469515     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(02)00424-8     Document Type: Article

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