Deposition of SiO2 layers on 4H-SiC by photochemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 329-331

  Chiou, Yu Zung ^a   Chang, Chia Sheng ^a   Chang, Shoou Jinn ^a   Su, Yan Kuin ^a   Chiou, Jung Ran ^b   Huang, Bohr Ran ^b   Chen, Jone F ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DENSITY (OPTICAL); DEPOSITION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PARTIAL PRESSURE; SUBSTRATES;

INSULATING LAYERS; INTERFACE STATE DENSITY; PHOTOCHEMICAL VAPOR DEPOSITION;

SILICA;

EID: 0037207723     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1542617     Document Type: Article

References (10)

1. J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, Jr., Physica B 185, 461 (1993).
2. L. A. Lipkin and J. W. Palmour, IEEE Trans. Electron Devices 46, 525 (1999).
3. C. J. Huang and Y. K. Su, J. Appl. Phys. 67, 3350 (1990).
4. S. J. Chang, Y. K. Su, F. S. Juang, C. T. Lin, C. D. Chiang, and Y. T. Cherng, IEEE J. Quantum Electron. 36, 583 (2000).
5. C. T. Lin, Y. K. Su, S. J. Chang, H. T. Huang, S. M. Chang, and T. P. Sun, IEEE Photonics Technol. Lett. 9, 232 (1997).
6. C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun, and J. J. Luo, IEEE Photonics Technol. Lett. 8, 676 (1996).
7. C. T. Lin, S. J. Chang, D. K. Nayak, and Y. Shiraki, Jpn. J. Appl. Phys., Part 1 34, 72 (1995).
8. U. Itoh, Y. Toyoshima, H. Onuki, N. Washida, and T. Ibuki, J. Chem. Phys. 85, 4867 (1986).
9. H. Okabe, Photochemistry of Small Molecules (Wiley, New York, 1978).
10. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Artech House, New York, 1982), Chap. 8.