Combination of germanium preamorphization and sub-keV boron implantation for source/drain extension of pMOSFETs

Extended Abstracts of the 2nd International Workshop on Junction Technology, IWJT 2001

Volumn , Issue , 2001, Pages 35-38

  Adachi, K ^a   Ohuchi, K ^a   Toyoshima, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON;

ACCELERATION ENERGY; BORON IMPLANTATION; HIGH-SHEET-RESISTANCE; PRE-AMORPHIZATION; PRE-AMORPHIZATION IMPLANTATION; SHORT-CHANNEL EFFECT; SOURCE/DRAIN EXTENSION; TRANSIENT ENHANCED DIFFUSION;

GERMANIUM;

EID: 50849122629     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2001.993821     Document Type: Conference Paper

References (3)

1. A. Mineji, S. Shishiguchi, T. Matsuda and S. Saito, Proc. IIT1998, p34.
2. R.B. Fair, IEEE Trans. ED37 (1990) 2237.
3. A. Al-Bayati, S. Tandon, A. Mayur, M. Foad and D. Wagner, Proc. IIT 2000,p54.