a-Si Capping SIMS for shallow dopant profiles

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 658-662

  Miwa, Shiro ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Amorphous Si; Capping SIMS; Evaporation; Ultra shallow profile

Indexed keywords

AMORPHOUS SILICON; EVAPORATION; INTERFACES (MATERIALS); ION IMPLANTATION; PROFILOMETRY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SPUTTERING;

CAPPING SECONDARY ION MASS SPECTROMETRY (SIMS); OXYGEN FLOODING; PRIMARY IONS; ULTRA SHALLOW PROFILE;

SURFACE CHEMISTRY;

EID: 2942622139     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.138     Document Type: Conference Paper

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