Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 268-271

  Bersani, M ^a   Lazzeri, P ^a   Giubertoni, D ^a   Barozzi, M ^a   Marchi, E Boscolo ^a   Anderle, M ^a  

^a ITC IRST   (Italy)

Author keywords

depth profiling; shallow implant; SIMS

Indexed keywords

ARSENIC; ION IMPLANTATION; IONS; MASS SPECTROMETERS; MASS SPECTROMETRY; MICROELECTRONICS; SECONDARY ION MASS SPECTROMETRY;

ANALYTICAL CONDITIONS; ARSENIC IMPLANTS; DOWN-SCALING; MAGNETIC SECTORS; SIMS DEPTH PROFILE; TIME-OF-FLIGHT MASS SPECTROMETERS; TIME-OF-FLIGHT SIMS; ULTRA SHALLOW JUNCTION;

DEPTH PROFILING;

EID: 84961340019     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257990     Document Type: Conference Paper

References (5)

1. The International Technology Roadmap for Semiconductor, Semiconductor Industry Association, San Jose, CA(2001)
2. M.Bersani, D. Giubertoni, M.Barozzi, L.Vanzetti, P.Lazzeri, and F. Zanderigo "SIMS and Tof-SIMS Quantitative Depth Profile Comparison on Ultra thin Oxynitrides: Ultimate Depth Resolution Analyses Based on Sputtering", Applied Surface Science, in press.
3. R. G. Wilson, F. A. Stevie, C. W. Magee, Secondary Ion Mass Spectrometry, New York: John Wiley & Sons, 1989, pp. 1.1-1.
4. M. Tomita, C. Hongo and A. Murakoshi, "Native oxide effect on ultra shallow arsenic profile in silicon", in SIMS XII, Proceedings of the 12th International Conference on Secondary Ion Mass Spectrometry, A. Benninghoven, P. Bertrand, H.-N. Migeon and H. W. Werner, Eds., Amsterdam: Elsevier Science, 2000, pp. 489-492.
5. E. De Chambost, B. Boyer, B. Rasser and M. Schuhmacher, "Ultra low energy Cs bombardment on a magnetic sector instrument", in SIMS XII, Proceedings of the 12th International Conference on Secondary Ion Mass Spectrometry, A. Benninghoven, P. Bertrand, H.-N. Migeon and H. W. Werner, Eds., Amsterdam: Elsevier Science, 2000, pp. 533-536.