Accurate characterization of dose and shape of ultra low energy arsenic (1keV and 2keV) implants by SIMS

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 244-247

  Biswas, Sukanta ^a   Mulcahy, Christopher ^a   Banks, Peter ^b   Collart, Eric ^b  

^a BRUNEL UNIVERSITY   (United Kingdom)

^b Applied Materials   (United Kingdom)

Author keywords

Boron; Energy measurement; Implants; Ion beams; Isotopes; Mass spectroscopy; Shape measurement; Silicon; Sputtering; Temperature

Indexed keywords

ARSENIC; BORON; CHEMICAL VAPOR DEPOSITION; DENTAL PROSTHESES; DIMERS; ELECTRIC POWER MEASUREMENT; ION BEAMS; ION BOMBARDMENT; IONS; ISOTOPES; MASS SPECTROMETRY; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTERING; TEMPERATURE;

ION BEAM BOMBARDMENT; LOW TEMPERATURES; MASS SPECTROSCOPY; NORMAL INCIDENCE; RUTHERFORD BACK-SCATTERING; SHAPE MEASUREMENTS; SILICON ISOTOPES; ULTRA LOW ENERGY;

ION IMPLANTATION;

EID: 84961312345     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257984     Document Type: Conference Paper

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