Advanced mask inspection optical system (AMOS) using 198.5nm wavelength for 65nm (hp) node and beyond -System development and initial state D/D inspection performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 2, 2004, Pages 1011-1023

  Tojo, Toru ^a,b,e   Hirano, Ryoich ^a,e   Tsuchiya, Hideo ^a   Oaki, Junji ^a   Nishizaka, Takeshi ^a   Sanada, Yasushi ^a   Matsuki, Kazuto ^a   Isomura, Ikunao ^a   Ogawa, Riki ^a   Kobayashi, Noboru ^a   Nakashima, Kazuhiro ^a   Sugihara, Shinji ^a   Inoue, Hiromu ^a   Imai, Shinichi ^a   Suzuki, Hitoshi ^b   Sekine, Akihiko ^b   Taya, Makoto ^b   Miwa, Akemi ^b   Yoshioka, Nobuyuki ^c   Ohira, Katsumi ^c   Chung, Dong Hoon ^c   Otaki, Masao ^d   more..

^a TOSHIBA CORPORATION   (Japan)

^b TOPCON CORPORATION   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^d TOPPAN PRINTING CO LTD   (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

198.5nm wavelength; Defect; Defect detection sensitivity; Die to die inspection; Mask; Optics

Indexed keywords

COMPUTER SIMULATION; DEFECTS; IMAGE ANALYSIS; LIGHTING; LITHOGRAPHY; OPTICAL SYSTEMS; OPTICS; SENSITIVITY ANALYSIS; SENSORS; ULTRAVIOLET RADIATION;

198.5NM WAVELENGTH; DEFECT DETECTION SENSITIVITY; DIE-TO-DIE INSPECTION; DUV WAVELENGTH;

MASKS;

EID: 21144479011     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.579133     Document Type: Conference Paper

References (13)

1. B. G. Kim, et al., "Required performance of reticle inspection system for ArF lithography, Through analysis of defect printability study", Proceeding of SPIE Vol. 4754, pp.517-525, 2002.
2. T. Tojo, et al., "Mask defect inspection method by database comparison with 0.25-0.35μm sensitivity", Jpn. J. App. Phys. Vol. 33, Pt.1, No.12B, pp. 7156-7162, 1994.
3. M. Tabata, et al., "A new die-to-database mask inspection system with I-line optics for 256 Mbit and 1 Gbit DRAMs". Proceeding of SPIE Vol. 3096, pp.415-418, 1997.
4. M. Tabata, et al., "High resolution DUV inspection system for 150nm generation masks", Proceeding of SPIE Vol. 3873, pp. 138-146, 1999.
5. H. Tsuchiya, et al., "High performance DUV inspection system for 100nm generation mask", Proceeding of SPIE Vol. 4574, pp.526-533, 2002.
6. B. G. Kim, et al., "Performance of high resolution DUV inspection system for ArF lithography reticle", Proceeding of SPIE, Vol.4754, pp. 517, 2002.
7. B. G. .Kim, et al., "Inspection capability of high-transmittance HTPSM and OPC masks for ArF lithography", Proceeding of SPIE Vol. 5130, pp.447-453, 2003.
8. Dong-Hoon Chung, et al., "Optical inspection strategy for 65nm and beyond", Digest of Papers Photomask Japan 2004, pp.75-76, Yokohama, April 2004.
9. S. Imai et al., "CW 198.5nm light generation in CLBO", OSATOPS, Vol. 84, Advanced Solid-State Photonics, pp. 380-383, 2002.
10. H. Inoue, et al., Dai 64-kai Ouyou-Buturi Gakkai Gakujyutukouen-kai (Autumn, Japanese), Ip-W-17, 2003.
11. D. Alles, et al., "Reticle inspection system using DUV wavelength and new algorithm platform for advanced reticle inspection for 0.13μm technology node", Proceeding of SPIE Vol. 4066. pp. 426-471, 2000.
12. R. Ogawa, et al, "Characteristic of an autofocus system on a grating with period smaller than the focus beam wavelength", Proceeding of SPIE Vol. 5256, pp.965972, 2003.
13. K. Oohashi, et al., Newly developed mask inspection system with DUV laser illumination, Proceeding of SPIE Vol. 4066, pp452-461, 2000.