Effect of stress on creation of defects in annealed Czochralski grown silicon

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 191-196

  Misiuk, A ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); HYDROSTATIC PRESSURE; NUCLEATION; OXYGEN; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); PRESSURE EFFECTS; STRESS ANALYSIS; X RAY SCATTERING;

X RAY DIFFUSE SCATTERING;

SEMICONDUCTING SILICON;

EID: 0032738729     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<191::AID-PSSA191>3.0.CO;2-Y     Document Type: Article

References (9)

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