Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 769-772

  Emtsev, V V ^a   Andreev, B A ^b   Davydov, V Yu ^a   Poloskin, D S ^a   Oganesyan, G A ^a   Kryzhkov, D I ^b   Shmagin, V B ^b   Emtsev Jr , V V ^c   Misiuk, A ^d   Londos, C A ^e  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c UNIVERSITY OF AMSTERDAM   (Netherlands)

^d ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^e UNIVERSITY OF ATHENS   (Greece)

Author keywords

Compressive stress; Silicon; Thermal donors

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CHARGE CARRIERS; COMPRESSIVE STRESS; DIFFUSION; ELECTRIC VARIABLES MEASUREMENT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROSTATIC PRESSURE; OPTICAL VARIABLES MEASUREMENT; SILICON; THERMAL EFFECTS;

INFRARED ABSORPTION; THERMAL DOUBLE DONORS (TDD);

CRYSTAL GROWTH FROM MELT;

EID: 0346504185     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.118     Document Type: Conference Paper

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