Enhanced annealing of damage in ion-implanted 4H-SiC by MeV ion-beam irradiation

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Kinomura, A ^a   Chayahara, A ^a   Mokuno, Y ^a   Tsubouchi, N ^a   Horino, Y ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COLUMNAR GROWTH; ION BEAM ANNEALING; ION MASS EFFECTS; PLANAR DEVICE STRUCTURES;

AMORPHIZATION; ANNEALING; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; NUCLEATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

SILICON CARBIDE;

EID: 21044459376     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1904160     Document Type: Article

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