Implantation-induced defects in silicon carbide

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 121-127

  Pensl, G ^a   Frank, T ^a   Krieger, M ^a   Laube, M ^a   Reshanov, S ^a   Schmid, F ^a   Weidner, M ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Implantation induced defects; Negative U center; Silicon carbide; Site competition technique

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DOPING (ADDITIVES); HALL EFFECT; ION IMPLANTATION; IONIZATION; LIGHT EMITTING DIODES; LIGHTING; THERMOANALYSIS; THERMODYNAMIC STABILITY;

IMPLANTATION INDUCED DEFECTS; SITE COMPETITION TECHNIQUE;

SILICON CARBIDE;

EID: 0346504217     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.054     Document Type: Conference Paper

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