Ion-beam annealing of diamond using Ar ions up to 400 keV

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 1043-1047

  Ogura, Masahiko ^a   Hasegawa, Masataka ^a   Tanaka, Yasunori ^a   Kobayashi, Naoto ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; DOSIMETRY; ELECTRON ENERGY LEVELS; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING DIAMONDS;

DEPTH DISTRIBUTION; ION BEAM ANNEALING;

IRRADIATION;

EID: 0033871244     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00892-7     Document Type: Article

References (14)

1. G.Z. Cao, L.J. Giling, P.F. Alkemade, Diam. Relat. Mater. 4 (1995) 775.
2. S. Koizumi, M. Kamo, Y. Sato, Appl. Phys. Lett. 71 (1997) 1065.
3. T. Evans, in: J.E. Field (Ed.), The Properties of Diamond, Academic Press, London, 1979, Chapter 13, p. 403.
4. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon, New York, 1985.
5. C. Uzan-Saguy, C. Cytermann, R. Brener, V. Richter, M. Shaanan, R. Kalish, Appl. Phys. Lett. 67 (1995) 1194.
6. K.A. Jackson, J. Mater. Res. 3 (1988) 1218.
7. N. Kobayashi, M. Hasegawa, H. Kobayashi, N. Hayashi, M. Shinohara, F. Ohtani, M. Asari, Nucl. Instr. and Meth. B 59-60 (1991) 449.
8. J. Nakata, Phys. Rev. B 43 (1991) 14643.
9. N. Kobayashi, M. Hasegawa, N. Hayashi, Nucl. Instr. and Meth. B 80-81 (1993) 790.
10. M. Adel, R. Kalish, V. Richter, J. Mater. Res. 1 (1986) 503.
11. R. Kalish, S. Prawer, Nucl. Instr. and Meth. B 106 (1995) 492.
12. D. Saada, J. Adler, R. Kalish, Internat. J. Modern Phys. C 9 (1998) 61.
13. B. Massarani, J.C. Bourgoin, Phys. Rev. B 14 (1976) 3682.
14. J.F. Prins, Mater. Sci. Rep. 7 (1992) 271.