Ion beam modification of Si/SiC/Si layer systems

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 355-359

  Volz, K ^a   Lindner, J K N ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; ION BOMBARDMENT; NUCLEATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC); ION BEAM SYNTHESIS (IBS); SOLID PHASE EPITAXIAL GROWTH (SPEG);

SILICON CARBIDE;

EID: 0031547951     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00956-1     Document Type: Article

References (10)

1. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys. 76 (1994) 1363.
2. W. Wesch, A. Heft, J. Heindl, H.P. Strunk, T. Bachmann, E. Glaser and E. Wendler, accepted for publication.
3. F. Priolo and E. Rimini, Mater. Sci. Rep. 5 no. 7/8 (1990) 319.
4. V. Heera, J. Stoemenos, R. Kögler and W. Skorupa, J. Appl. Phys. 77 (1995) 2999.
5. V. Heera, R. Kögler, W. Skorupa and J. Stoemenos, Inst. Phys. Conf. Ser. no. 142 (IOP Publishing Ltd., Bristol, 1996) p.533.
6. J.K.N. Lindner, K. Volz and B. Stritzker, Inst. Phys. Conf. Ser. no. 142 (IOP Publishing Ltd., Bristol, 1996) p. 145.
7. J.K.N. Lindner, K. Volz, U. Preckwinkel, B. Götz, A. Frohnwieser, B. Rauschenbach and B. Stritzker, Mater. Chem. and Phys. 46 (1996) 147.
8. J.F. Ziegler, J.P. Biersack and U. Littmark, in: The Stopping and Range of Ions in Matter, Vol. 1, ed. by J.F. Ziegler (Pergamon Press, New York, 1985).
9. J.A. Spitznagel, S. Wood, W.J. Choyke, N.J. Doyle, J. Bradshaw and S.G. Fishman, Nucl. Instr. and Meth. B16 (1986) 237.
10. V. Heine, C. Cheng and R.J. Needs, Mater. Sci. Eng. B11 (1992) 55.