Mass effects on regrowth rates and activation energies of solid-phase epitaxy induced by ion beams in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 23, 1999, Pages 15214-15224

  Fujii, K ^b   Williams, J S ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000406397     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.15214     Document Type: Article

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