Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition

Diamond and Related Materials

Volumn 9, Issue 3-6, 2000, Pages 283-289

  Chang, L ^a   Yan, J E ^b   Chen, F R ^b   Kai, J J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Bias; Heteroepitaxy; Silicon carbide; Transmission electron microscopy

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; HYDROGEN; METHANE; MICROACTUATORS; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

HETEROEPITAXIAL GROWTH;

DIAMOND FILMS;

DIAMOND COATING; ELECTRON MICROSCOPY; SILICON CARBIDE; VAPOR DEPOSITION;

EID: 0034088213     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00333-7     Document Type: Conference Paper

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