Towards improving the quality of semiconducting diamond layers doped with large atoms

Diamond and Related Materials

Volumn 8, Issue 8-9, 1999, Pages 1635-1641

  Prins, Johan F ^a  

^a UNIVERSITY OF THE WITWATERSRAND   (South Africa)

Author keywords

Diamond; Ion implantation; N type doping

Indexed keywords

ACTIVATION ENERGY; ATOMS; DENSITY (SPECIFIC GRAVITY); ELECTRONS; HALL EFFECT; ION IMPLANTATION; MATHEMATICAL MODELS; PASSIVATION; PHOSPHORUS; RAPID THERMAL ANNEALING; SURFACE ROUGHNESS; TEMPERATURE;

ACTIVATED DONOR ATOMS; LARGE SCALE PASSIVATION; MULTIPLE COLD IMPLANTATION RAPID ANNEALING; NEGATIVE ELECTRON AFFINITY; SEMICONDUCTING DIAMOND LAYERS; THERMAL ELECTRO MOTIVE FORCE MEASUREMENTS; VACANCY DENSITY;

SEMICONDUCTING DIAMONDS;

EID: 0032594255     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(99)00035-7     Document Type: Article

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