SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 45, Issue 12, 2001, Pages 1999-2003

Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET

(4) Wu, Jau Yi a Sze, Po Wen b Wang, Yeong Her a Houng, Mau Phon a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b KAO YUAN INSTITUTE OF TECHNOLOGY (Taiwan)

Author keywords

Breakdown electrical field; GaAs MOSFET; Gate leakage current; Temperature effect

Indexed keywords

CURRENT DENSITY; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; THERMOOXIDATION;

BREAKDOWN ELECTRICAL FIELDS;

MOSFET DEVICES;

EID: 0035545653 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00216-7 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.