Generalized Einstein relation for disordered semiconductors - Implications for device performance

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 1948-1950

  Roichman, Yohai ^a   Tessler, Nir ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL WIDTHS; CONTACT PHENOMENA; DENSITY OF STATE; DEVICE PERFORMANCE; DIFFUSION PARAMETERS; DISORDERED SEMICONDUCTORS; EXCITON GENERATION; GENERALIZED EINSTEIN RELATION; ORGANIC MATERIALS; QUASI-EQUILIBRIUM; SMALL MOLECULES; STEADY-STATE ANALYSIS;

LIGHT EMITTING DIODES; ORGANIC POLYMERS;

FIELD EFFECT TRANSISTORS;

EID: 79956017820     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1461419     Document Type: Article

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