Effect of keto defects on the electrical properties of fluorene-based oligomers

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2953-2955

  Noh, Yong Young ^a   Kim, Dong Yu ^a   Yoshida, Yuji ^b   Yase, Kiyoshi ^b   Jung, Byung Jun ^c,d   Lim, Eunhee ^c   Shim, Hong Ku ^c   Azumi, Reiko ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC PROPERTIES; FLUORINE; IRRADIATION; KETONES; OLIGOMERS; PHOTODEGRADATION; PHOTOLUMINESCENCE; POLYMERS; THIN FILMS;

BITHIOPHENE OLIGOMERS (BFTT); FLUORINE-BASED OLIGOMERS; KETONIC DEFECTS; ORGANIC FIELD-EFFECT TRANSISTORS (OFET);

FIELD EFFECT TRANSISTORS;

EID: 8344265357     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1787939     Document Type: Article

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