Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Nishikawa, Takao ^a,b,c   Kobayashi, Shin Ichiro ^a,d   Nakanowatari, Tomoyuki ^a   Mitani, Tadaoki ^b   Shimoda, Tatsuya ^b,c   Kubozono, Yoshihiro ^e   Yamamoto, Gakushi ^f   Ishii, Hisao ^d   Niwano, Michio ^f   Iwasa, Yoshihiro ^a,d  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c SEIKO EPSON CORPORATION   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e OKAYAMA UNIVERSITY   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

KELVIN PROBE EXPERIMENTS; METAL INTERFACE MODIFICATION; METALLOFULLERENE; RADIO FREQUENCY;

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; FULLERENES; SELF ASSEMBLY; SEMICONDUCTING ORGANIC COMPOUNDS; SINGLE CRYSTALS; THIN FILM TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 20944450549     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1903109     Document Type: Article

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