Effect of nonlinear physical phenomena on the photovoltaic effect in silicon p+-n-n+ solar cells

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 383-392

  Mnatsakanov, T T ^a   Shuman, V B ^b   Pomortseva, L I ^a   Schroder D ^c   Schlogl A ^c  

^a ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ELECTRON HOLE SCATTERING; NONLINEAR PHYSICAL PHENOMENA; SILICON SOLAR CELL;

SOLAR CELLS;

EID: 0034159385     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00171-9     Document Type: Article

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