Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Werner, M ^a   Van Den Berg, J A ^a   Armour, D G ^a   Carter, G ^a   Feudel, T ^b   Herden, M ^b   Bersani, M ^c   Giubertoni, D ^c   Ottaviano, L ^d   Bongiorno, C ^d   Mannino, G ^d   Bailey, P ^e   Noakes, T C Q ^e  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b IBM MICROELECTRONICS   (United States)

^c FONDAZIONE BRUNO KESSLER   (Italy)

^d CNR   (Italy)

^e DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; BORON COMPOUNDS; ELECTRON TRAPS; FLUORINE; ION BOMBARDMENT; ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY; XENON;

MEDIUM-ENERGY ION SCATTERING (MEIS); PREAMORPHIZED SI; SHALLOW BF2; SOLID PHASE EPITAXIALLY REGROWN (SPER) LAYER;

SILICON;

EID: 20844446951     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900305     Document Type: Article

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