Secondary defects in low-energy As- and BF2-implanted Si

Materials Chemistry and Physics

Volumn 54, Issue 1-3, 1998, Pages 23-27

  Tamura, Masao ^a   Hiroyama, Yuichi ^a   Nishida, Akio ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

As ion implantation; BF2 ion implantation; Secondary defects; SIMS measurement; TEM observation; TRIM calculation

Indexed keywords

ANNEALING; ARSENIC; ATOMS; BORON COMPOUNDS; DISSOLUTION; EPITAXIAL GROWTH; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

BORON FLUORIDE; SECONDARY DEFECTS;

CRYSTAL DEFECTS;

EID: 0032115419     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00013-3     Document Type: Article

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