Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence O2+ beam

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 336-340

  Giubertoni, D ^a   Barozzi, M ^a   Anderle, M ^a   Bersani, M ^a  

^a ITC IRST   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CALIBRATION; CONCENTRATION (PROCESS); INTERFEROMETERS; ION BOMBARDMENT; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; SPUTTERING; SURFACE ROUGHNESS;

OXYGEN FLOODING; ULTRA-SHALLOW BORON;

SEMICONDUCTOR JUNCTIONS;

EID: 1642348338     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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